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Same model may have multiple batches, images only for reference.
FDP16AN08A0 Real Image
Same model may have multiple batches, images only for reference.

FDP16AN08A0

Part No FDP16AN08A0
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 58A TO-220AB
Datasheet
FDP16AN08A0 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 9A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 1857pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 135W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 58A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1038309-FDP16AN08A0
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Communications & Networking, Computers & Computer Peripherals
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDP16AN08A0 CAD Model

Description

The FDP16AN08A0 is a N-Channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Maximum Power Dissipation: 135W
  • Drain-Source Breakdown Voltage: 75V
  • Status: Active
  • Popularity: Medium
  • Applications: Industrial, Communications, and Networking
  • Supply and Demand Status: Sufficient
  • Package: TO-220-3
  • Pieces per Package: 800

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3657 $61.4565
105+ $1.1206 $117.6630
160+ $1.0856 $173.6960
220+ $1.0506 $231.1320
285+ $1.0156 $289.4460
385+ $0.9105 $350.5425
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,800 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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