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Same model may have multiple batches, images only for reference.
IRFR3709ZTRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR3709ZTRLPBF

Part No IRFR3709ZTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 86A DPAK
Datasheet
IRFR3709ZTRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 26nC @ 4.5V
Max Input Capacitance 2330pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047057-IRFR3709ZTRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR3709ZTRLPBF CAD Model

Description

The Infineon Technologies 1047057-IRFR3709ZTRLPBF is an N-channel MOSFET with a drain-source breakdown voltage of 30V.

  • Continuous Drain Current: 86A (Tc) @ 25°C
  • Maximum Rds on: 6.5 mOhm @ 15A, 10V
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Maximum Input Capacitance: 2330pF @ 15V
  • Max Gate Charge: 26nC @ 4.5V
  • Supply and Demand Status: Balanced
  • Status: Active

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67+ $1.4975 $100.3325
104+ $1.4469 $150.4776
149+ $1.3457 $200.5093
194+ $1.2951 $251.2494
242+ $1.2446 $301.1932
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Availability: 5,580 pieces
MOQ: 32 pcs
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