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IRFR3711ZTRPBF

Part No IRFR3711ZTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 93A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 93A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.45V @ 250μA
Max Gate Charge 27nC @ 4.5V
Max Input Capacitance 2160pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 5.7 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 001282-IRFR3711ZTRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR3711ZTRPBF CAD Model

Description

The Infineon Technologies 001282-IRFR3711ZTRPBF MOSFET is a high-performance N-Channel MOSFET that is ideal for use in a wide range of applications.

  • Maximum Power Dissipation: 79W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 93A (Tc) @ 25°C
  • Maximum Rds On: 5.7 mOhm @ 15A, 10V
  • Gate-Source Threshold Voltage: 2.45V @ 250μA
  • Maximum Gate Charge: 27nC @ 4.5V
  • Maximum Input Capacitance: 2160pF @ 10V
  • Package: D-Pak
  • Ideal for use in: discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $29.3234 $58.6468
5+ $24.0602 $120.3010
7+ $23.3083 $163.1581
9+ $22.5564 $203.0076
12+ $21.8046 $261.6552
16+ $19.5489 $312.7824
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,220 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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