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Same model may have multiple batches, images only for reference.
IRFR4105TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR4105TRPBF

Part No IRFR4105TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 27A DPAK
Datasheet
IRFR4105TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 45 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 069562-IRFR4105TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR4105TRPBF CAD Model

Description

The Infineon Technologies IRFR4105TRPBF is a N-channel MOSFET transistor with a drain-source breakdown voltage of 55V and a continuous drain current of 27A @ 25°C.

  • Maximum Power Dissipation: 68W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package: D-Pak case
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Status: active
  • Temperature Range: -55°C to 175°C (TJ)
  • Maximum Rds On: 45 mOhm @ 16A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6126 $52.0710
175+ $0.5738 $100.4150
275+ $0.5545 $152.4875
390+ $0.5157 $201.1230
505+ $0.4963 $250.6315
630+ $0.4769 $300.4470
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,470 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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