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Same model may have multiple batches, images only for reference.
IRFR5410 Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFR5410

Part No IRFR5410
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 13A DPAK
Datasheet
IRFR5410 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 58nC @ 10V
Max Input Capacitance 760pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 66W (Tc)
Maximum Rds On at Id,Vgs 205 mOhm @ 7.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 60822-IRFR5410
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Automotive, Power Management
Ultra Librarian 3D Model Ultra Librarian IRFR5410 CAD Model

Description

The Infineon Technologies 60822-IRFR5410 MOSFET is a high-performance P-Channel MOSFET that is ideal for use in a wide range of applications.

  • Power Dissipation: 66W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 13A (Tc) @ 25°C
  • Maximum Rds On at Id,Vgs: 205 mOhm @ 7.8A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 58nC @ 10V
  • Maximum Input Capacitance: 760pF @ 25V
  • Package: D-Pak

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3042 $50.1930
355+ $0.2849 $101.1395
545+ $0.2753 $150.0385
785+ $0.2560 $200.9600
1,015+ $0.2464 $250.0960
1,270+ $0.2368 $300.7360
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Availability: 58,000 pieces
MOQ: 165 pcs
Order Increment : 1 pcs
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