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IRFS23N15DPBF

Part No IRFS23N15DPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package D2PAK
Continuous Drain Current (ID) 23 A
Current Rating 23 A
Drain to Source Breakdown Voltage 150 V
Drain to Source Resistance 90 mΩ
Drain to Source Voltage (Vdss) 150 V
Element Configuration Single
Fall Time 8.4 ns
Gate to Source Voltage (Vgs) 30 V
Height 4.699 mm
Input Capacitance 1.2 nF
Lead Free Yes
Length 10.668 mm
Maximum Operating Temperature 175 °C
Max Power Dissipation 136 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 3
Packaging Bulk
Power Dissipation 136 W
Radiation Hardening No
Rise Time 32 ns
RoHS Compliant
Turn-Off Delay Time 18 ns
Turn-On Delay Time 10 ns
Voltage Rating (DC) 150 V
Width 9.65 mm
Win Source Part Number 1065585-IRFS23N15DPBF
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRFS23N15DPBF CAD Model

Description

The IRFS23N15DPBF is an N-channel MOSFET transistor from Infineon Technologies that is designed for use in a range of applications.

  • Drain to Source Voltage: 150 V
  • Current Rating: 23A
  • Rds On (Max) @ Id, Vgs: 90 mΩ @ 10V
  • Package: D2PAK
  • Format: bulk

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