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IRFS23N20DPBF

Name: IRFS23N20DPBF
Brand: Infineon Technologies
SKU: 803909
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IRFS23N20DPBF
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	MOSFET N-CH 200V 24A D2PAK / SMPS MOSFET
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Manufacturer	Infineon Technologies
Packaging	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) at 25°C	24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	100mOhm at 14A, 10V
Vgs(th) (Maximum) at Id	5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	86nC at 10V
Maximum Vgs	±30V
Input Capacitance (Ciss) (Maximum) at Vds	1960pF at 25V
Power Dissipation (Maximum)	3.8W , 170W (Tc)
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	SMD
Supplier Device Package	D2PAK
Manufacturer Package	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity	50
MSL Level	1 (Unlimited)
Popularity	Medium
Supply and Demand Status	Balance
Win Source Part Number	803909-IRFS23N20DPBF
Ultra Librarian 3D Model	Ultra Librarian IRFS23N20DPBF CAD Model

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Description

The Infineon Technologies IRFS23N20DPBF is an N-channel MOSFET type integrated circuit.

Temperature Range: -55°C to 175°C
Drain to Source Voltage: 200V
Maximum Power Dissipation: 3.8W
Package: D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Popularity: medium
Gate Charge @ 10V: 86nC
Input Capacitance @ 25V: 1960pF
Continuous Drain Current @ 25°C: 24A

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
4+	$15.8608	$63.4432
9+	$13.0141	$117.1269
14+	$12.6074	$176.5036
19+	$12.2007	$231.8133
25+	$11.7939	$294.8475
33+	$10.5739	$348.9387

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 1,600 pieces

MOQ: 4 pcs

Order Increment : 1 pcs

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