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IRFU2607ZPBF

Name: IRFU2607ZPBF
Brand: Infineon Technologies
SKU: 777082
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IRFU2607ZPBF
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 75V 42A I-PAK / Trans MOSFET N-CH Si 75V 45A 3-Pin(3+Tab) IPAK
Datasheet	IRFU2607ZPBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Series	HEXFET
Packaging	Tube
Part Status	Obsolete(EOL)
Channel Type Type	N
Technology	MOSFET
Drain Source Voltage	75V
Current - Continuous Drain (Id) @ 25°C	42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs(th) (Maximum) @ Id	4V @ 50μA
Gate Charge (Qg) (Maximum) @ Vgs	51nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds	1440pF @ 25V
Vgs (Maximum)	±20V
Power Dissipation (Maximum)	110W (Tc)
Rds On (Maximum) @ Id, Vgs	22 mOhm @ 30A, 10V
Operating Temperature Range	-55°C ~ 175°C (TJ)
Mounting Style	Through Hole
Manufacturer Package	IPAK (TO-251)
Package	TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number	777082-IRFU2607ZPBF
Popularity	Medium
Supply and Demand Status	Limited
Family Name	IRFU2607Z
Introduction Date	December 21, 2004
ECCN	EAR99
Country of Origin	Mexico
Halogen Free	Compliant
Estimated EOL Date	Obsolete / End of life
Ultra Librarian 3D Model	Ultra Librarian IRFU2607ZPBF CAD Model

Alternative Products

Description

The Infineon Technologies HEXFET MOSFET is a high-performance N-channel MOSFET designed for use in various applications.

Maximum Drain-Source Voltage: 75V
Continuous Drain Current: 42A (Tc) @ 25°C
Package: TO-251-3 Short Leads, IPak, TO-251AA
Temperature Range: -55°C to 175°C (TJ)
Maximum Power Dissipation: 110W (Tc)
Maximum Rds On: 22 mOhm @ 30A, 10V
Gate Charge: 51nC @ 10V
Input Capacitance: 1440pF @ 25V
Estimated EOL Date: Not Specified

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IRFU2607ZPBF

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