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Same model may have multiple batches, images only for reference.
IRFU3710ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRFU3710ZPBF

Part No IRFU3710ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 42A I-PAK
Datasheet
IRFU3710ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 2930pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047217-IRFU3710ZPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU3710ZPBF CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel power transistor with a drain-source breakdown voltage of 100V and a continuous drain current of 42A @ 25°C.

  • Power Dissipation: 140W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Mounting: Through-hole
  • Package: IPAK (TO-251)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On @ Id,Vgs: 18 mOhm @ 33A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 100nC @ 10V
  • Status: Obsolete (EOL)

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Quantity Unit Price Ext. Price
65+ $0.9205 $59.8325
155+ $0.7554 $117.0870
240+ $0.7311 $175.4640
330+ $0.7080 $233.6400
425+ $0.6838 $290.6150
565+ $0.6133 $346.5145
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Availability: 11,700 pieces
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