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Same model may have multiple batches, images only for reference.
IRFU48ZPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFU48ZPBF

Part No IRFU48ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 42A I-PAK
Datasheet
IRFU48ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 50μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1720pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 91W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 37A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1040388-IRFU48ZPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFU48ZPBF CAD Model

Description

The Infineon Technologies IRFU48ZPBF is an N-Channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 91W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 42A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 50μA
  • Maximum Rds On: 11 mOhm @ 37A, 10V
  • Package: IPAK (TO-251)
  • Mounting: Through-Hole
  • Temperature Range: -55°C to 175°C (TJ)
  • Product Status: Obsolete(EOL)

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28+ $12.7824 $357.9072
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