The Infineon Technologies IRFU5305PBF is a P-Channel MOSFET with a maximum power dissipation of 110W (Tc). It has a drain-source breakdown voltage of 55V and a continuous drain current @ 25°C of 31A (Tc). With a maximum Rds On @ Id,Vgs of 65 mOhm @ 16A, 10V, this MOSFET is suitable for a wide range of applications. The gate-source threshold voltage is 4V @ 250μA, and the max gate charge is 63nC @ 10V. The maximum input capacitance is 1200pF @ 25V. The IRFU5305PBF is packaged in IPAK (TO-251) and is mounted through hole. It is a common-used part with high popularity and balanced supply and demand status.