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Same model may have multiple batches, images only for reference.
IRFU6215PBF Real Image
Same model may have multiple batches, images only for reference.

IRFU6215PBF

Part No IRFU6215PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 150V 13A I-PAK
Datasheet
IRFU6215PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 66nC @ 10V
Max Input Capacitance 860pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 295 mOhm @ 6.6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047224-IRFU6215PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU6215PBF CAD Model

Description

The Infineon Technologies MOSFET with Win Source Part Number 1047224-IRFU6215PBF is a P-channel device designed for various applications.

  • Maximum Power Dissipation: 110W (Tc)
  • Drain-Source Breakdown Voltage: 150V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 66nC @ 10V
  • Maximum Input Capacitance: 860pF @ 25V
  • Maximum Rds On @ Id,Vgs: 295 mOhm @ 6.6A, 10V
  • Package: IPAK (TO-251)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Popularity: medium
  • Supply and Demand Status: balanced

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9+ $13.2490 $119.2410
14+ $12.8355 $179.6970
19+ $12.4209 $235.9971
25+ $12.0074 $300.1850
33+ $10.7658 $355.2714
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Availability: 3,950 pieces
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