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Same model may have multiple batches, images only for reference.
IRFZ44VS Real Image
Same model may have multiple batches, images only for reference.

IRFZ44VS

Part No IRFZ44VS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 55A D2PAK
Datasheet
IRFZ44VS Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 67nC @ 10V
Max Input Capacitance 1812pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 115W (Tc)
Maximum Rds On at Id,Vgs 16.5 mOhm @ 31A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047250-IRFZ44VS
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFZ44VS CAD Model

Description

The Infineon Technologies IRFZ44VS is a N-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 55A @ 25°C
  • Maximum Rds On: 16.5 mOhm @ 31A and 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 67nC @ 10V
  • Maximum Input Capacitance: 1812pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Package: D2PAK
  • Mounting: SMD (SMT)
  • Power Dissipation: 115W (Tc)
  • Applications: Automotive, computers & computer peripherals, communications & networking, consumer electronics, lighting, sensing & instrumentation, and industrial

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