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IRFZ46NPBF

Part No IRFZ46NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 53A TO-220AB / Trans MOSFET N-CH Si 55V 53A 3-Pin(3+Tab) TO-220AB Tube
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 72nC @ 10V
Max Input Capacitance 1696pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 107W (Tc)
Maximum Rds On at Id,Vgs 16.5 mOhm @ 28A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017733-IRFZ46NPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFZ46N
Introduction Date January 29, 2004
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFZ46NPBF CAD Model

Description

The Infineon Technologies MOSFET is a polarized N-channel transistor that features a drain-source breakdown voltage of 55V and a maximum power dissipation of 107W @ Tc.

  • Drain-Source Breakdown Voltage: 55V
  • Maximum Power Dissipation: 107W @ Tc
  • Package: TO-220AB
  • Continuous Drain Current: 53A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 72nC @ 10V
  • Supply and demand status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3505 $50.8225
350+ $0.2876 $100.6600
540+ $0.2786 $150.4440
745+ $0.2696 $200.8520
960+ $0.2606 $250.1760
1,285+ $0.2337 $300.3045
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,327 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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