The IRG4CC10SD is an Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, designed for high-speed switching applications. It combines the advantages of both MOSFETs and bipolar transistors, offering high input impedance and low on-state voltage. This IGBT is commonly used in applications such as induction heating, welding, and power inverters.

Applications:

• Induction Heating
• Welding Equipment
• Power Inverters
• Uninterruptible Power Supplies (UPS)
• Motor Drives

Features:

• Short Circuit Rated
• Ultrafast Co-Pack Diode
• Low VCE(on)
• High Input Impedance
• Fast Switching
• Tight Parameter Distribution

Benefits:

• High Efficiency: Low VCE(on) reduces conduction losses, resulting in higher efficiency in power conversion applications.
• Fast Switching: Fast switching speeds reduce switching losses, further enhancing efficiency.
• Robustness: Short circuit rating ensures the device can withstand fault conditions, enhancing reliability.
• Ease of Use: High input impedance simplifies gate drive requirements.
• Integrated Diode: Ultrafast co-pack diode improves performance in inductive loads.

Technical Specifications:

The IRG4CC10SD has a collector-emitter voltage (VCE) of 600V, a collector current (IC) of 6A, and a pulsed collector current (ICM) of 24A. The gate-emitter voltage (VGE) is ±20V. The on-state voltage (VCE(on)) is typically 2.1V at IC = 6A. The turn-off time is typically 75ns. It comes in a TO-220 package.