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IRG4PC40FDPBF

Part No IRG4PC40FDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 600V 49A 160W TO247AC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 49A
Current - Collector Pulsed (Icm) 196A
Vce(on) (Maximum) at Vge, Ic 1.7V at 15V, 27A
Maximum Power 160W
Switching Energy 950μJ (on), 2.01mJ (off)
Input Type Standard
Gate Charge 100nC
Td (on/off) at 25°C 63ns/230ns
Test Condition 480V, 27A, 10Ohm, 15V
Reverse Recovery Time (trr) 42ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AC
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188271-IRG4PC40FDPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG4PC40FDPBF CAD Model

Description

The Infineon Technologies IRG4PC40FDPBF is an IGBT transistor in a TO-247AC package.

  • Maximum Collector-Emitter Voltage: 600V
  • Maximum Collector Current: 49A
  • Reverse Recovery Time: 42ns
  • Switching Energy: 950μJ (on) and 2.01mJ (off)
  • Gate Charge: 100nC
  • Test Condition: 480V, 27A, 10Ohm, 15V
  • Popularity: Yes
  • Supply and Demand Status: Limited
  • Manufacturer Pack Quantity: 25
  • MSL Level: 1 (unlimited)
  • Maximum Power: 160W
  • Vce(on) (Maximum) @ Vge, Ic: 1.7V @ 15V, 27A
  • Td (on/off) @ 25°C: 63ns/230ns

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