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Same model may have multiple batches, images only for reference.
IRGB4045DPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRGB4045DPBF

Part No IRGB4045DPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 12A 77W TO220AB
Datasheet
IRGB4045DPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 12A
Pulsed Collector Current 18A
Collector-emitter saturation voltage(Max) 2V @ 15V, 6A
Maximum Power Dissipation 77W
Total Switching Energy(Ets) 56μJ (on), 122μJ (off)
Input Type Standard
Gate Charge 13nC
Turn-on and Turn-off delay time 27ns/75ns
Testing Conditions 400V, 6A, 47 Ohm, 15V
Reverse Recovery Time (trr) 74ns
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Win Source Part Number 205441-IRGB4045DPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGB4045DPBF CAD Model

Description

The Infineon Technologies IRGB4045DPBF is an obsolete (EOL) IGBT with a collector-emitter breakdown voltage of 600V and a maximum collector current of 12A.

  • Package: TO-220AB
  • Gate Charge: 13nC
  • IGBT Structure: Trench
  • Reverse Recovery Time (trr): 74ns
  • Turn-On Delay Time: 27ns
  • Turn-Off Delay Time: 75ns
  • Total Switching Energy (on): 56μJ
  • Total Switching Energy (off): 122μJ
  • Collector-Emitter Saturation Voltage (Max): 2V @ 15V and 6A

The IGBT is suitable for use in discrete semiconductor products.

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