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IRGIB6B60KDPBF

Part No IRGIB6B60KDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 11A 38W TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 11A
Pulsed Collector Current 22A
Collector-emitter saturation voltage(Max) 2.2V @ 15V, 5A
Maximum Power Dissipation 38W
Total Switching Energy(Ets) 110μJ (on), 135μJ (off)
Input Type Standard
Gate Charge 18.2nC
Turn-on and Turn-off delay time 25ns/215ns
Testing Conditions 400V, 5A, 100 Ohm, 15V
Reverse Recovery Time (trr) 70ns
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Win Source Part Number 069670-IRGIB6B60KDPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRGIB6B60KD
Introduction Date May 26, 2004
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian IRGIB6B60KDPBF CAD Model

Description

The Infineon Technologies IRGIB6B60KDPBF is an IGBT transistor with a maximum collector-emitter breakdown voltage of 600V and a maximum current collector of 11A. It is a high-performance NPT IGBT type with a reverse recovery time of 70ns and a gate charge of 18.2nC.

  • Package: TO-220AB Full-Pak
  • Maximum Power Dissipation: 38W
  • Family Name: IRGIB6B60KD
  • Popularity: high
  • Supply and Demand Status: balanced
  • Estimated EOL Date: 2019.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5772 $60.6060
245+ $0.4737 $116.0565
380+ $0.4588 $174.3440
525+ $0.4440 $233.1000
675+ $0.4292 $289.7100
905+ $0.3848 $348.2440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,700 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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