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Same model may have multiple batches, images only for reference.
IRGP6630DPBF Real Image
Same model may have multiple batches, images only for reference.

IRGP6630DPBF

Part No IRGP6630DPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IRGP6630D - IGBT WITH ULTRAFAST
Datasheet
IRGP6630DPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Package Bulk
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 47 A
Current - Collector Pulsed (Icm) 54 A
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 18A
Power - Max 192 W
Switching Energy 75µJ (on), 350µJ (off)
Input Type Standard
Gate Charge 30 nC
Td (on/off) @ 25°C 40ns/95ns
Test Condition 400V, 18A, 22Ohm, 15V
Reverse Recovery Time (trr) 70 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AC
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 921532-IRGP6630DPBF
Ultra Librarian 3D Model Ultra Librarian IRGP6630DPBF CAD Model

Description

The 921532-IRGP6630DPBF is a single IGBT transistor from Infineon Technologies.

  • Maximum Power Rating: 192W
  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current (Ic): 47A
  • Pulsed Current (Icm): 54A
  • On-State Voltage (Vce(on)): 1.95V @ 15V gate-emitter voltage (Vge) and 18A collector current
  • Reverse Recovery Time (trr): 70ns
  • Input Application: Standard
  • Package: Bulk
  • ECCN: EAR99

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57+ $2.0513 $116.9241
88+ $1.9872 $174.8736
121+ $1.9231 $232.6951
156+ $1.8590 $290.0040
208+ $1.6667 $346.6736
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Availability: 770 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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