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MUN5330DW1T1G

Part No MUN5330DW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 1k
Resistor - Emitter Base (R2) (Ohms) 1k
Typical Gain (hFE) (Min) 3 @ 5mA, 10V
Max Vce (sat) 250mV @ 5mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 126884-MUN5330DW1T1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MUN5330DW1T1G CAD Model

Description

The MUN5330DW1T1G from ON Semiconductor is a cutting-edge, dual bipolar transistor designed to meet the stringent requirements of modern electronic applications. This product is meticulously crafted to provide reliable performance and efficient operation, making it an ideal choice for designers and engineers alike.

Key Features:

  • Dual Bipolar Transistors: The device contains two independent NPN transistors in a single package, which allows for compact circuit design and simplified assembly processes.
  • High Current Gain: With a high current gain (hFE), this component ensures excellent amplification characteristics for signal processing applications.
  • Low Collector-Emitter Saturation Voltage: The low V<sub>CE(sat) enables efficient operation and reduces power loss, making it suitable for low-voltage applications.
  • SOT-363 Package: The small surface mount SOT-363 package is designed for space-constrained applications and helps in achieving high-density PCB layouts.
  • Lead-Free and RoHS Compliant: The MUN5330DW1T1G adheres to environmental regulations by being completely lead-free and RoHS compliant, reflecting ON Semiconductor's commitment to sustainability.

Applications:

The versatile nature of the MUN5330DW1T1G allows it to be used in a wide array of applications, including but not limited to:

  • Signal amplification in audio and video equipment
  • Driver stages in amplifiers
  • Switching circuits in consumer electronics
  • Power management in portable devices
  • Control systems in automotive technologies

Technical Specifications:

Parameter Value Configuration Dual NPN Collector-Emitter Voltage (V<sub>CEO) 50V Collector Current (I<sub>C) 100mA Power Dissipation (P<sub>D) 150mW DC Current Gain (hFE) 220 at 10mA V<sub>CE

In summary, the MUN5330DW1T1G from ON Semiconductor is an exceptional component that offers reliability, efficiency, and versatility for a multitude of electronic applications. Its dual transistor configuration and robust electrical characteristics make it a valuable addition to any circuit design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,265+ $0.0457 $57.8105
3,080+ $0.0376 $115.8080
4,765+ $0.0364 $173.4460
6,560+ $0.0353 $231.5680
8,475+ $0.0341 $288.9975
11,365+ $0.0305 $346.6325
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,700 pieces
MOQ: 1265 pcs
Order Increment : 1 pcs
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