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IRGPC30KD2

Part No IRGPC30KD2
Manufacturer Infineon Technologies
Catalog OEM Parts (F - I)
Description 600V Copack IGBT in a TO-3P (TO-247AC) package
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Rohs State Need to verify
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Win Source Part Number 1065613-IRGPC30KD2
Categories OEM Parts(F-I)
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRGPC30KD2 CAD Model

Description

The IRGPC30KD2 is an Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, designed for high-voltage, high-current switching applications. It combines the advantages of both MOSFETs and bipolar junction transistors, offering high input impedance and low on-state voltage drop, making it suitable for efficient power switching.

Applications

  • Uninterruptible Power Supplies (UPS)
  • Welding equipment
  • Induction heating
  • Power Factor Correction (PFC) circuits
  • Motor drives

Features

  • High speed switching: Optimized for high-frequency operation, reducing switching losses.
  • Low VCE(on): Minimizes conduction losses for improved efficiency.
  • Short circuit ruggedness: Provides robustness against overcurrent conditions.
  • Gate-Oxide protected: Ensures gate reliability and prevents gate rupture.
  • Logic level gate drive: Allows direct drive from microcontrollers and logic devices.
  • Temperature stable behavior: Provides consistent performance across a wide temperature range.

Benefits

  • Improved efficiency: Lower conduction and switching losses translate to higher overall system efficiency.
  • Reduced system size and cost: High-frequency operation allows for smaller and less expensive passive components.
  • Enhanced reliability: Short circuit ruggedness and gate-oxide protection contribute to a more robust and reliable design.
  • Simplified design: Logic level gate drive simplifies the gate drive circuitry.
  • Stable operation: Temperature stability ensures predictable performance in various operating conditions.

Additional Details

The IRGPC30KD2 is typically available in a TO-247 package. Key technical specifications include a collector-emitter voltage (VCE) rating of 600V, a collector current (IC) rating of 40A (at 25°C), and a gate-emitter voltage (VGE) rating of ±20V. It features a fast recovery diode for improved performance in inductive switching applications. The device is RoHS compliant, ensuring adherence to environmental regulations. Its low gate charge (Qg) contributes to faster switching speeds and reduced gate drive power requirements. Designed for hard switching applications, the IRGPC30KD2 offers a combination of speed, ruggedness, and efficiency, making it a suitable choice for a variety of power electronic systems. It offers reduced EMI emissions and low thermal impedance for effective heat dissipation.

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