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Same model may have multiple batches, images only for reference.
IRGPS60B120KD Real Image
Same model may have multiple batches, images only for reference.

IRGPS60B120KD

Part No IRGPS60B120KD
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 105A 595W SUPER247
Datasheet
IRGPS60B120KD Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 105A
Pulsed Collector Current 240A
Collector-emitter saturation voltage(Max) 2.75V @ 15V, 60A
Maximum Power Dissipation 595W
Total Switching Energy(Ets) 3.21mJ (on), 4.78mJ (off)
Input Type Standard
Gate Charge 340nC
Testing Conditions 600V, 15A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) 180ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package SUPER-247 (TO-274AA)
Win Source Part Number 069680-IRGPS60B120KD
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGPS60B120KD CAD Model

Description

The Infineon Technologies 069680-IRGPS60B120KD is an IGBT transistor with a maximum collector-emitter breakdown voltage of 1200V and a maximum collector current of 105A.

  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Collector Current: 105A
  • Case/Package: SUPER-247 (TO-274AA)
  • Maximum Power Dissipation: 595W
  • Reverse Recovery Time: 180ns
  • Gate Charge: 340nC
  • IGBT Type: NPT
  • Input Type: Standard
  • Mounting: Through-Hole
  • Product Category: Discrete Semiconductor Product
  • Market Status: Active
  • Supply and Demand Status: Limited

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