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IRL2505PBF

Part No IRL2505PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 104A TO-220AB
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 130nC @ 5V
Max Input Capacitance 5000pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 54A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069686-IRL2505PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRL2505PBF CAD Model

Description

The Infineon Technologies IRL2505PBF is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a drain-source breakdown voltage of 55V and a continuous drain current at 25°C of 104A (Tc).

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current at 25°C: 104A (Tc)
  • Mounting: Through-hole
  • Package: TO-220AB
  • Power Dissipation: 200W (Tc)
  • Input Type: Standard
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 130nC @ 5V
  • Turn-On and Turn-Off Delay Time: 22ns/100ns
  • Maximum Rds On at Id,Vgs: 8 mOhm @ 54A, 10V
  • Testing Conditions: 600V, 6A, 50 Ohm, 15V
  • Category: Discrete Semiconductor Products
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.8208 $52.3872
21+ $4.7761 $100.2981
33+ $4.6268 $152.6844
45+ $4.4776 $201.4920
58+ $4.3283 $251.0414
78+ $3.8806 $302.6868
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 217 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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