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SI4214DDY-T1-E3

Part No SI4214DDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8.5A 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.5A
Maximum Rds On at Id,Vgs 19.5 mOhm @ 8A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 660pF @ 15V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 064481-SI4214DDY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4214DDY-T1-E3 CAD Model

Description

The Vishay 064481-SI4214DDY-T1-E3 is a dual N-channel FET that is suitable for use in various electronic applications.

  • Maximum Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 8.5A
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 22nC @ 10V
  • Gate Type: logic-level gate
  • Packaging: 8-SO
  • Category: Discrete Semiconductor Products
  • Status: active
  • Maximum Power Dissipation: 3.1W
  • Alternative Parts: AO4854, Si4214DDY-T1-GE3, and Si4214DDY
  • Popularity: medium
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5573 $58.5165
255+ $0.4573 $116.6115
395+ $0.4431 $175.0245
540+ $0.4287 $231.4980
700+ $0.4144 $290.0800
935+ $0.3716 $347.4460
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 72,000 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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