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Same model may have multiple batches, images only for reference.
IRL3705NLPBF Real Image
Same model may have multiple batches, images only for reference.

IRL3705NLPBF

Part No IRL3705NLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 89A TO-262
Datasheet
IRL3705NLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 98nC @ 5V
Max Input Capacitance 3600pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 170W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 46A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 205461-IRL3705NLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRL3705NLPBF CAD Model

Description

The Infineon Technologies 205461-IRL3705NLPBF is an N-channel MOSFET that has a maximum drain-source breakdown voltage of 55V and a continuous drain current of 89A at 25°C.

  • Maximum Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 89A @ 25°C
  • Case/Package: TO-262
  • Maximum Power Dissipation: 3.8W (Ta) and 170W (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Max Gate Charge: 98nC @ 5V
  • Max Input Capacitance: 3600pF @ 25V
  • Maximum Rds On: 10 mOhm @ 46A, 10V
  • Application: Discrete semiconductor products

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