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Same model may have multiple batches, images only for reference.
IRL3714STRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRL3714STRRPBF

Part No IRL3714STRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 36A D2PAK / Trans MOSFET N-CH 20V 36A 3-Pin(2+Tab) D2PAK T/R
Datasheet
IRL3714STRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 20V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 9.7nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 670pF @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 47W (Tc)
Rds On (Maximum) @ Id, Vgs 20 mOhm @ 18A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 777112-IRL3714STRRPBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Family Name IRL3714
Introduction Date July 20, 2004
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRL3714STRRPBF CAD Model

Description

The Infineon Technologies IRL3714STRRPBF is a MOSFET transistor.

  • Maximum Drain-Source Voltage: 20V
  • Maximum Continuous Drain Current: 36A (Tc)
  • Series: HEXFET
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Gate Charge: 9.7nC @ 4.5V
  • Input Capacitance (Ciss): 670pF @ 10V
  • Rds On: 20 mOhm @ 18A, 10V
  • Application: Discrete Semiconductor Products
  • Power Dissipation: 47W (Tc)
  • Status: Obsolete, Limited Supply and Demand

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