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Same model may have multiple batches, images only for reference.
IRL3715ZS Real Image
Same model may have multiple batches, images only for reference.

IRL3715ZS

Part No IRL3715ZS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 50A D2PAK
Datasheet
IRL3715ZS Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 870pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047482-IRL3715ZS
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRL3715ZS CAD Model

Description

The Infineon Technologies IRL3715ZS is a N-Channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 50A at 25°C.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 50A @ 25°C
  • Power Dissipation: 45W (Tc)
  • Package: D2PAK
  • Status: obsolete (EOL)
  • Popularity: medium
  • Maximum Rds On at Id,Vgs: 11 mOhm @ 15A, 10V
  • Gate-Source Threshold Voltage: 2.55V @ 250μA
  • Maximum Gate Charge: 11nC @ 4.5V
  • Maximum Input Capacitance: 870pF @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and demand status: sufficient

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106+ $2.1830 $231.3980
137+ $2.1102 $289.0974
184+ $1.8919 $348.1096
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