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Same model may have multiple batches, images only for reference.
IRL3803VSPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRL3803VSPBF

Part No IRL3803VSPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 140A D2PAK
Datasheet
IRL3803VSPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 76nC @ 4.5V
Max Input Capacitance 3720pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 71A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 040794-IRL3803VSPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRL3803VSPBF CAD Model

Description

The Infineon Technologies 040794-IRL3803VSPBF is a high-performance MOSFET that can be used in a variety of applications.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Continuous Drain Current: 140A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Rds On at Id,Vgs: 5.5 mOhm @ 71A, 10V
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Input Capacitance: 3720pF @ 25V
  • Maximum Gate Charge: 76nC @ 4.5V
  • Package: D2PAK
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Power Dissipation: 3.8W (Ta), 200W (Tc)
  • Category: Discrete Semiconductor Products

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