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IRL530NSTRRPBF

Part No IRL530NSTRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 17A D2PAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 34nC @ 5V
Max Input Capacitance 800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 79W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 040796-IRL530NSTRRPBF
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian IRL530NSTRRPBF CAD Model

Description

The Infineon Technologies IRL530NSTRRPBF is an N-channel MOSFET transistor that comes in a D2PAK package.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 17A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 34nC @ 5V
  • Maximum Input Capacitance: 800pF @ 25V
  • Maximum Rds On at Id,Vgs: 100 mOhm @ 9A, 10V
  • Category: Discrete Semiconductor Products
  • Recommendation: Not recommended for new designs
  • Supply and Demand Status: Limited
  • Common Use: Industrial Applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9324 $52.7832
42+ $2.4061 $101.0562
65+ $2.3309 $151.5085
89+ $2.2557 $200.7573
115+ $2.1805 $250.7575
154+ $1.9549 $301.0546
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Availability: 8,830 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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