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Same model may have multiple batches, images only for reference.
IRL5602S Real Image
Same model may have multiple batches, images only for reference.

IRL5602S

Part No IRL5602S
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 24A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 44nC @ 4.5V
Max Input Capacitance 1460pF @ 15V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 42 mOhm @ 12A, 4.5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 107382-IRL5602S
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRL5602S CAD Model

Description

The Infineon Technologies IRL5602S is a P-Channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 24A @ 25°C.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 24A @ 25°C
  • Maximum Rds On: 42 mOhm @ 12A and 4.5V
  • Maximum Gate-Source Voltage: ±8V
  • Package: D2PAK
  • Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Category: Discrete Semiconductor Products
  • Power Dissipation: 75W (Tc)
  • Drive Voltage: 2.5V, 4.5V
  • Temperature Range: -55°C to 175°C (TJ)
  • Status: Obsolete (EOL)

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Quantity Unit Price Ext. Price
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210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
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