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Same model may have multiple batches, images only for reference.
IRL5602STRL Real Image
Same model may have multiple batches, images only for reference.

IRL5602STRL

Part No IRL5602STRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 24A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 44nC @ 4.5V
Max Input Capacitance 1460pF @ 15V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 42 mOhm @ 12A, 4.5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 113117-IRL5602STRL
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian IRL5602STRL CAD Model

Description

Infineon Technologies presents the IRL5602STRL MOSFET, a P-channel device that is ideal for use in a variety of applications.

  • Power Dissipation: 75W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 24A (Tc) @ 25°C
  • Maximum Rds On: 42 mOhm @ 12A and 4.5V
  • Package: D2PAK case
  • Mounting Technology: SMD (SMT)
  • Maximum Gate Charge: 44nC @ 4.5V
  • Maximum Input Capacitance: 1460pF @ 15V

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,300 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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