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Same model may have multiple batches, images only for reference.
IRFIZ34N Real Image
Same model may have multiple batches, images only for reference.

IRFIZ34N

Part No IRFIZ34N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 21A TO220FP
Datasheet
IRFIZ34N Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 37W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Dimension TO-220-3 Full Pack
Win Source Part Number 040721-IRFIZ34N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFIZ34N CAD Model

Description

The IRFIZ34N is an N-channel MOSFET transistor from Infineon Technologies that is designed for use in various electronic applications.

  • Maximum Power Dissipation: 37W
  • Temperature Range: -55°C to 175°C
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 21A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 34nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6817 $58.8595
85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,900 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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