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IRLBA1304

Part No IRLBA1304
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 185A SUPER-220 / N-Channel 40 V 185A (Tc) 300W (Tc) Through Hole SUPER-220™ (TO-273AA)
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 185A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 110A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 4.5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 7660 pF @ 25 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package SUPER-220™ (TO-273AA)
Package / Case TO-273AA
Base Product Number IRLBA130
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50 pcs
Win Source Part Number 1382330-IRLBA1304
Ultra Librarian 3D Model Ultra Librarian IRLBA1304 CAD Model

Description

The IRLBA1304 is a N-Channel MOSFET transistor from Infineon Technologies. It belongs to the HEXFET series and is designed for use in discrete semiconductor products, specifically in transistors and FETs.

  • Package: TO-273AA (SUPER-220™)
  • Drain to Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id) @ 25°C: 185A
  • On-Resistance (Rds On): 4mOhm @ 110A and 10V
  • Gate Charge (Qg): 140nC @ 4.5V
  • Input Capacitance (Ciss): 7660pF @ 25V
  • Operating Temperature: -55°C to 175°C
  • Power Dissipation: 300W
  • Product Status: Obsolete
  • RoHS Compliant: No

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