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IRLBD59N04E

Part No IRLBD59N04E
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 59A D2PAK-5
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 50nC @ 5V
Max Input Capacitance 2190pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263-5
Dimension TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
Win Source Part Number 069710-IRLBD59N04E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLBD59N04E CAD Model

Description

The Infineon Technologies 069710-IRLBD59N04E is a high-performance N-channel MOSFET that can be used in a variety of applications.

  • Drain-Source Breakdown Voltage: 40V
  • Maximum Continuous Drain Current: 59A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Rds On at Id,Vgs: 18 mOhm @ 35A, 10V
  • Maximum Gate-Source Voltage: ±10V
  • Maximum Input Capacitance: 2190pF @ 25V
  • Maximum Gate Charge: 50nC @ 5V
  • Package: TO-263-5 case
  • Power Dissipation: 130W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $54.1279 $108.2558
3+ $44.4132 $133.2396
5+ $43.0249 $215.1245
6+ $41.6378 $249.8268
8+ $40.2494 $321.9952
10+ $36.0857 $360.8570
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,840 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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