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Same model may have multiple batches, images only for reference.
IRLHM620TR2PBF Real Image
Same model may have multiple batches, images only for reference.

IRLHM620TR2PBF

Part No IRLHM620TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 26A PQFN
Datasheet
IRLHM620TR2PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 26A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.1V @ 50μA
Max Gate Charge 78nC @ 4.5V
Max Input Capacitance 3620pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.7W (Ta), 37W (Tc)
Maximum Rds On at Id,Vgs 2.5 mOhm @ 20A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (3x3)
Dimension 8-VQFN Exposed Pad
Win Source Part Number 1047539-IRLHM620TR2PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLHM620TR2PBF CAD Model

Description

The Infineon Technologies 439063 MOSFET is a N-channel power transistor that is designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 2.7W (Ta) and 37W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 26A (Ta) and 40A (Tc)
  • Gate-Source Threshold Voltage: 1.1V @ 50μA
  • Maximum Rds On at Id,Vgs: 2.5 mOhm @ 20A, 4.5V
  • Package: PQFN (3x3)
  • Mounting: SMD (SMT) technology
  • Operating Temperature: -55°C to 150°C (TJ)
  • Status: obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9471 $52.0905
130+ $0.7772 $101.0360
200+ $0.7529 $150.5800
275+ $0.7286 $200.3650
355+ $0.7043 $250.0265
480+ $0.6314 $303.0720
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