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Same model may have multiple batches, images only for reference.
IRLI2203N Real Image
Same model may have multiple batches, images only for reference.

IRLI2203N

Part No IRLI2203N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 61A TO220FP
Datasheet
IRLI2203N Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 110nC @ 4.5V
Max Input Capacitance 3500pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 47W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 37A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Dimension TO-220-3 Full Pack
Win Source Part Number 108546-IRLI2203N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLI2203N CAD Model

Description

The Infineon Technologies IRLI2203N is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 61A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 110nC @ 4.5V
  • Maximum Input Capacitance: 3500pF @ 25V
  • Maximum Rds On @ Id,Vgs: 7 mOhm @ 37A, 10V
  • Package: TO-220AB Full-Pak
  • Mounting: Through Hole
  • Technology: MOSFET
  • Polarity: N-channel
  • Power Dissipation: 47W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Popularity: Medium
  • Supply and Demand Status: Limited

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125+ $0.9402 $117.5250
195+ $0.9113 $177.7035
265+ $0.8813 $233.5445
340+ $0.8524 $289.8160
455+ $0.7646 $347.8930
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