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Same model may have multiple batches, images only for reference.
IRLI540NPBF Real Image
Same model may have multiple batches, images only for reference.

IRLI540NPBF

Part No IRLI540NPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 100V 23A TO220FP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 23A
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Maximum) at Id, Vgs 44mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 74nC at 5V
Gate Source Voltage (Maximum) ±16V
Input Capacitance (Ciss) (Maximum) at Vds 1800pF at 25V
Power Dissipation (Maximum) 54W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB Full-Pak
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 2,000
MSL Level 1 (Unlimited)
Win Source Part Number 1188553-IRLI540NPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRLI540NPBF CAD Model

Description

The IRLI540NPBF is an N-channel enhancement-mode MOSFET from Infineon Technologies.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 23A
  • Popularity: Medium
  • Win Source Part Number: 1188553-IRLI540NPBF
  • Package: TO-220AB Full-Pak
  • Maximum Power Dissipation: 54W
  • On-Resistance: 44mOhm @ 12A and 10V
  • Gate-Source Voltage Threshold: 2V @ 250μA
  • Gate Charge: 74nC @ 5V
  • Maximum Gate-Source Voltage: ±16V
  • Input Capacitance: 1800pF @ 25V
  • Suitable for: Power management applications in industrial and consumer markets

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