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IRLL024NPBF

Part No IRLL024NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 3.1A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 15.6nC @ 5V
Max Input Capacitance 510pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 65 mOhm @ 3.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1047565-IRLL024NPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLL024NPBF CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel power transistor with a drain-source breakdown voltage of 55V and a continuous drain current of 3.1A @ 25°C.

  • Power Dissipation: 1W (Ta)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Mounting: SMD (SMT)
  • Package: SOT-223
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Rds On @ Id,Vgs: 65 mOhm @ 3.1A, 10V
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Gate Charge: 15.6nC @ 5V
  • Status: Not for new designs

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Pricing & Ordering

Quantity Unit Price Ext. Price
220+ $0.2323 $51.1060
460+ $0.2176 $100.0960
715+ $0.2103 $150.3645
1,025+ $0.1956 $200.4900
1,330+ $0.1882 $250.3060
1,660+ $0.1809 $300.2940
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 45,700 pieces
MOQ: 220 pcs
Order Increment : 1 pcs
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