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Same model may have multiple batches, images only for reference.
IRLR3715TRL Real Image
Same model may have multiple batches, images only for reference.

IRLR3715TRL

Part No IRLR3715TRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 54A DPAK
Datasheet
IRLR3715TRL Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1060pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 71W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047611-IRLR3715TRL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLR3715TRL CAD Model

Description

The Infineon Technologies MOSFET is an N-Channel device with a drain-source breakdown voltage of 20V.

  • Manufacturer: Infineon Technologies
  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 54A @ 25°C
  • Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Max Gate Charge: 17nC @ 4.5V
  • Maximum Rds On: 14 mOhm @ 26A, 10V
  • Case: D-Pak
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Category: Discrete Semiconductor Products

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