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IRLR6225PBF

Part No IRLR6225PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 100A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.1V @ 50μA
Max Gate Charge 72nC @ 4.5V
Max Input Capacitance 3770pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 21A, 4.5V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047622-IRLR6225PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLR6225PBF CAD Model

Description

The Infineon Technologies IRLR6225PBF is a high power N-Channel MOSFET designed for use in discrete semiconductor products.

  • Package: DPAK
  • Leads: Two leads and a tab
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Power Dissipation: 63W (Tc)
  • Continuous Drain Current: 100A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 1.1V @ 50μA
  • Maximum Gate Charge: 72nC @ 4.5V
  • Maximum Input Capacitance: 3770pF @ 10V
  • Maximum Rds On @ Id,Vgs: 4 mOhm @ 21A, 4.5V
  • Operating Temperature Range: -50°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6584 $59.2560
215+ $0.5405 $116.2075
335+ $0.5232 $175.2720
460+ $0.5070 $233.2200
590+ $0.4897 $288.9230
790+ $0.4389 $346.7310
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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