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Same model may have multiple batches, images only for reference.
IRLU3705ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRLU3705ZPBF

Part No IRLU3705ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 42A I-PAK
Datasheet
IRLU3705ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 66nC @ 5V
Max Input Capacitance 2900pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 42A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 069768-IRLU3705ZPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLU3705ZPBF CAD Model

Description

The Infineon Technologies IRLU3705ZPBF is a MOSFET transistor with N-Channel polarity.

  • Maximum Power Dissipation: 130W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 42A (Tc) @ 25°C
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Rds On: 8 mOhm @ 42A, 10V
  • Mounting: Through-hole technology
  • Package: IPAK (TO-251) case
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 66nC @ 5V
  • Application: Power management

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