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Same model may have multiple batches, images only for reference.
TK62J60W,S1VQ(O
Same model may have multiple batches, images only for reference.

TK62J60W,S1VQ(O

Part No TK62J60W,S1VQ(O
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 600V 61.8A 3-Pin(3+Tab) TO-3PN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 61.8 A
Fall Time 15 ns
Gate to Source Voltage (Vgs) 30 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Power Dissipation 400 W
Radiation Hardening No
Rise Time 58 ns
RoHS Compliant
Turn-Off Delay Time 310 ns
Turn-On Delay Time 115 ns
Win Source Part Number 1099467-TK62J60W,S1VQ(O
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TK62J60W,S1VQ(O CAD Model

Description

The Toshiba Semiconductor and Storage 1099467-TK62J60W,S1VQ(O is a transistor that is part of the FETs, MOSFETs - RF category.

  • Power Dissipation: 400 W
  • Maximum Operating Temperature: 150°C
  • Supply and Demand Status: Shortage
  • ECCN: EAR99
  • Continuous Drain Current (ID): 61.8 A
  • Gate to Source Voltage (Vgs): 30 V

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