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IRSF3021LTR

Part No IRSF3021LTR
Manufacturer Infineon Technologies
Catalog PMIC - Power Distribution Switches, Load Drivers
Description IC DRIVER LO SIDE 50V 3A SOT-223
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Integrated Circuits
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Switch Type General Purpose
Number of Outputs 1
Output Type N-Channel
Voltage - Load 50V (Max)
Supply Voltage - Operating Not Required
Current - Output (Max) 3A
Rds On (Typ) 155 mOhm
Input Type Non-Inverting
Features Auto Restart, Slew Rate Controlled
Fault Protection Current Limiting (Fixed), Over Temperature
Temperature Range - Operating -55°C to 150°C (TJ)
Case / Package SOT-223
Win Source Part Number 1047850-IRSF3021LTR
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRSF3021LTR CAD Model

Description

The IRSF3021LTR is a high-side driver IC manufactured by Infineon Technologies. It's designed to drive MOSFETs or IGBTs in high-side switching applications, such as motor control, power supplies, and lighting systems. This driver provides features like overcurrent protection, undervoltage lockout, and adjustable dead time, enhancing system reliability and performance.

Applications

  • Motor control
  • Power supplies
  • Lighting systems
  • Automotive applications
  • UPS (Uninterruptible Power Supplies)
  • Inverters

Features

  • High-side driver
  • Adjustable dead time
  • Overcurrent protection
  • Undervoltage lockout
  • Integrated bootstrap diode
  • RoHS compliant

Benefits

  • Simplifies high-side drive implementation.
  • Protects the MOSFET/IGBT from overcurrent conditions.
  • Prevents MOSFET/IGBT damage due to low supply voltage.
  • Allows for efficient switching by adjusting the dead time.
  • Reduces external component count with the integrated bootstrap diode.

Additional Details

The IRSF3021LTR operates from a supply voltage range of typically 8V to 16V. It provides a gate drive voltage suitable for driving standard MOSFETs or IGBTs. The adjustable dead time feature allows for optimization of switching performance and minimization of switching losses. The overcurrent protection feature protects the driven device from damage in the event of an overcurrent condition. The undervoltage lockout feature prevents the device from operating when the supply voltage is too low, protecting the driven device from damage. The integrated bootstrap diode simplifies the high-side drive circuitry by eliminating the need for an external diode. The device is available in a surface-mount package for easy integration into automated assembly processes. It is commonly used in applications requiring efficient and reliable high-side switching.

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