The SIDC14D120H6X1SA1 is a silicon carbide (SiC) diode from Infineon Technologies, designed for high-voltage, high-frequency power applications. It's part of Infineon's CoolSiC™ diode family, offering superior performance compared to traditional silicon diodes.

Applications

• Power factor correction (PFC) circuits
• Solar inverters
• Uninterruptible power supplies (UPS)
• Electric vehicle (EV) charging stations
• Industrial power supplies

Features

• 1200V blocking voltage capability
• 14A continuous forward current
• Low forward voltage drop
• Temperature independent switching behavior
• High surge current capability
• RoHS compliant
• CoolSiC™ technology for superior performance

Benefits

• Higher efficiency due to low forward voltage drop and fast switching speeds.
• Improved system reliability with high surge current capability and robust design.
• Reduced cooling requirements due to lower power dissipation.
• Increased power density, enabling smaller and lighter designs.
• Simplified design due to temperature-independent switching behavior.

Specifications

The SIDC14D120H6X1SA1 has a repetitive peak reverse voltage (VRRM) of 1200V and a continuous forward current (IF) of 14A. The forward voltage drop (VF) is typically around 1.6V at the rated forward current and junction temperature of 25°C. It features a surge forward current (IFSM) capability of 63A. The junction temperature range is -55°C to +175°C. The device is typically packaged in a ThinPAK 8x8 package offering excellent thermal performance. The reverse recovery charge (Qrr) is very low, contributing to its fast switching characteristics.