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Same model may have multiple batches, images only for reference.
SKB15N60ATMA1 Real Image
Same model may have multiple batches, images only for reference.

SKB15N60ATMA1

Part No SKB15N60ATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 31A 139W TO263-3
Datasheet
SKB15N60ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 31A
Pulsed Collector Current 62A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 15A
Maximum Power Dissipation 139W
Total Switching Energy(Ets) 570μJ
Input Type Standard
Gate Charge 76nC
Turn-on and Turn-off delay time 32ns/234ns
Testing Conditions 400V, 15A, 21 Ohm, 15V
Reverse Recovery Time (trr) 279ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3
Win Source Part Number 124685-SKB15N60ATMA1
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian SKB15N60ATMA1 CAD Model

Description

The Infineon Technologies SKB15N60ATMA1 is a NPT IGBT type electronic component.

  • Designed for use in: Discrete Semiconductor Products.
  • Maximum Current Collector: 31A
  • Collector-Emitter Saturation Voltage(Max): 2.4V @ 15V, 15A
  • Total Switching Energy(Ets): 570μJ
  • Turn-On and Turn-Off Delay Time: 32ns/234ns
  • Packaged in: PG-TO263-3
  • Mounted using: SMD (SMT) technology.
  • Reverse Recovery Time (trr): 279ns
  • Gate Charge: 76nC
  • Maximum Power Dissipation: 139W
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
  • Status: Obsolete(EOL)
  • Popularity: Medium
  • Supply and Demand Status: Balance.

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