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Same model may have multiple batches, images only for reference.
SMBT3904PNH6327XTSA1 Real Image
Same model may have multiple batches, images only for reference.

SMBT3904PNH6327XTSA1

Part No SMBT3904PNH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 40V 0.2A SOT363-6
Datasheet
SMBT3904PNH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN, PNP
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 400mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 250mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT363-6
Win Source Part Number 100852-SMBT3904PNH6327XTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SMBT3904PNH6327XTSA1 CAD Model

Description

The Infineon Technologies SMBT3904PNH6327XTSA1 is a high-performance NPN and PNP bipolar transistor.

  • Product Type: Discrete Semiconductor
  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Application: Electronic Devices Requiring High-Frequency Transition
  • Maximum Collector-Emitter Breakdown Voltage: 40V
  • Maximum Power Dissipation: 250mW

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