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Same model may have multiple batches, images only for reference.
SN7002WH6327XTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

SN7002WH6327XTSA1

Part No SN7002WH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 230MA SOT-323
Datasheet
SN7002WH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.8V @ 26μA
Max Gate Charge 1.5nC @ 10V
Max Input Capacitance 45pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 5 Ohm @ 230mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT323-3
Dimension SC-70, SOT-323
Win Source Part Number 113664-SN7002WH6327XTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SN7002WH6327XTSA1 CAD Model

Description

The 113664-SN7002WH6327XTSA1 is a medium popularity MOSFET discrete semiconductor product by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 230mA (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 1.8V @ 26μA
  • Max Gate Charge: 1.5nC @ 10V
  • Case/Package: PG-SOT323-3
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and demand status: balanced

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Quantity Unit Price Ext. Price
1,800+ $0.0278 $50.0400
4,370+ $0.0229 $100.0730
6,790+ $0.0221 $150.0590
9,350+ $0.0214 $200.0900
12,080+ $0.0207 $250.0560
16,130+ $0.0186 $300.0180
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Availability: 45,430 pieces
MOQ: 1800 pcs
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