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Same model may have multiple batches, images only for reference.
SPA15N60CFD Real Image
Same model may have multiple batches, images only for reference.

SPA15N60CFD

Part No SPA15N60CFD
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 13.4A TO220-FP
Datasheet
SPA15N60CFD Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 13.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 750μA
Max Gate Charge 84nC @ 10V
Max Input Capacitance 1820pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 34W (Tc)
Maximum Rds On at Id,Vgs 330 mOhm @ 9.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 065912-SPA15N60CFD
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPA15N60CFD CAD Model

Description

The Infineon Technologies MOSFET, SPA15N60CFD, is a N-Channel transistor with a drain-source breakdown voltage of 650V and a maximum continuous drain current of 13.4A @ 25°C.

  • Maximum Power Dissipation: 34W @ an operating temperature range of -55°C to 150°C
  • Package: PG-TO220-FP package
  • Mounting: Through-hole
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 1820pF @ 25V
  • Status: Not recommended for new designs

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Quantity Unit Price Ext. Price
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44+ $2.6784 $117.8496
67+ $2.5953 $173.8851
92+ $2.5110 $231.0120
119+ $2.4278 $288.9082
160+ $2.1760 $348.1600
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