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SPB100N03S2L-03 G

Name: SPB100N03S2L-03 G
Brand: Infineon Technologies
SKU: 518260
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SPB100N03S2L-03 G
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 100A D2PAK
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	2V @ 250μA
Max Gate Charge	220nC @ 10V
Max Input Capacitance	8180pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	300W (Tc)
Maximum Rds On at Id,Vgs	2.7 mOhm @ 80A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	SMD (SMT)
Case / Package	PG-TO263-3-2
Dimension	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number	1101472-SPB100N03S2L-03 G
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian SPB100N03S2L-03 G CAD Model

Alternative Products

Description

The Infineon Technologies SPB100N03S2L-03 G is an obsolete (EOL) N-channel MOSFET.

Drain-Source Breakdown Voltage: 30V
Continuous Drain Current: 100A (Tc)
Power Dissipation: 300W (Tc)
Category: Discrete semiconductor products
Package: PG-TO263-3-2
Mounting: SMD (SMT)
Family Name: SPB100N03S2L-03 G
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB dimension
Operating Temperature Range: -55°C to 175°C (TJ)
Supply and Demand Status: Balanced
Popularity: Medium

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