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Same model may have multiple batches, images only for reference.
SPB42N03S2L-13 G Real Image
Same model may have multiple batches, images only for reference.

SPB42N03S2L-13 G

Part No SPB42N03S2L-13 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPB42N03S2L-13 G Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12.6mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 2V @ 37µA
Gate Charge (Qg) (Max) @ Vgs 30.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1130 pF @ 25 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SPB42N
Other Names SPB42N03S2L-13G,SPB42N03S2L13GXT,SP000200137,SPB42N03S2L-13 G
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
Win Source Part Number 1278298-SPB42N03S2L-13 G
Ultra Librarian 3D Model Ultra Librarian SPB42N03S2L-13 G CAD Model

Description

The SPB42N03S2L-13G is an N-channel MOSFET transistor from Infineon Technologies.

  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id) @ 25°C: 42A (Tc)
  • Maximum Rds On @ Id, Vgs: 12.6mOhm @ 21A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 25 V
  • Mounting Type: Surface Mount Device (SMD)
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Power Dissipation: 83W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)

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